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| KSC2310 KSC2310 High Voltage Power Amplifier * Collector-Base Voltage : VCBO=200V * Current Gain Bandwidth Product : fT=100MHz 1 TO-92L 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings 200 150 5 50 800 150 -55 ~ 150 Units V V V mA mW C C Electrical Characteristics Ta=25C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO hFE VCE (sat) fT Cob Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC=100A, IE=0 IC=5mA, IB=0 IE=100A, IC=0 VCB=200V, IE=0 VCE=5V, IC=10mA IC=10mA, IB=1mA VCE=30V, IC=10mA VCB=10V, IE=0, f=1MHz 100 3.5 5 40 Min. 200 150 5 0.1 240 0.5 V MHz pF Typ. Max. Units V V V A hFE Classification Classification hFE R 40 ~ 80 O 70 ~ 140 Y 120 ~ 240 (c)2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSC2310 Typical Characteristics 50 IB = 1000A IB = 500A IB = 400A 1000 VCE = 5V IC[mA], COLLECTOR CURRENT 40 30 IB = 200A 20 hFE, DC CURRENT GAIN IB = 300A 100 IB = 150A IB = 100A 10 0 0 2 4 6 8 10 12 10 1 10 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10 1000 IC = 10 IB VCE = 30V 1 VBE(sat) 100 0.1 VCE(sat) 10 0.01 0.1 1 10 100 1 0.1 1 10 100 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Current Gain Bandwidth Product 1000 1.6 IC[mA], COLLECTOR CURRENT 1. Ta=25 C 2. *Single Pulse o 1.4 PC[W], POWER DISSIPATION 100 1000 *300ms 100 1.2 1.0 DC 0.8 10 0.6 0.4 0.2 1 1 10 0.0 0 25 50 o 75 100 125 150 175 VCE[V], COLLECTOR-EMITTER VOLTAGE Ta[ C], AMIBIENT TEMPERATURE Figure 5. Safe Operating Area Figure 6. Power Derating (c)2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSC2310 Package Dimensions TO-92L 4.90 0.20 8.00 0.20 1.70 0.20 1.00 0.10 0.70MAX. 0.80 0.10 1.00MAX. 13.50 0.40 0.50 0.10 1.27TYP [1.27 0.20] 2.54 TYP 0.45 0.10 1.45 0.20 3.90 0.20 3.90 0.20 0.45 0.10 Dimensions in Millimeters (c)2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FACTTM ActiveArrayTM FACT Quiet seriesTM BottomlessTM FAST(R) FASTrTM CoolFETTM CROSSVOLTTM FRFETTM GlobalOptoisolatorTM DOMETM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER ImpliedDisconnectTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET(R) VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2002 Fairchild Semiconductor Corporation Rev. I1 |
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